Light emitting diode display substrate, a method for manufacturing the same, and display device
US10038097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2016 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Aug 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/38
Abstract
A light emitting diode display substrate, a method of manufacturing the same, and a display device are provided. The method includes: forming a planarization layer and a photoresist layer in sequence on a substrate on which a thin film transistor is formed, a light sensitivity of the planarization layer being higher than a light sensitivity of the photoresist layer; etching the planarization layer and the photoresist layer simultaneously, such that a pixel defining pattern is formed through a removed portion of the photoresist layer, and an anode via pattern is formed at a position of the planarization layer corresponding to the pixel defining pattern; forming an anode pattern layer on the substrate on which the above steps were performed, wherein the anode pattern layer comprises a plurality of anodes, such that the planarization layer located at edges of the anode via pattern covers edges of the anodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.