Light-emitting device and method of manufacturing thereof
US10038128B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2017 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Sep 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8314
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.