Light emitting device

US10038129B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• De-Shan Kuo · Hsinchu, TW
• Ting-Chia Ko · Hsinchu, TW
• Chun-Hsiang Tu · Hsinchu, TW
• Po-Shun Chiu · Hsinchu, TW

Key dates

• Filing date: Dec 26, 2017
• Grant date: Jul 31, 2018
• Expiry date: Dec 26, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/142

Abstract

A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.