ReRAM using stack of iron oxide and graphene oxide films
US10038140B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Jun 16, 2017 |
| Grant date | Jul 31, 2018 |
| Priority date | — |
| Expiry date | Jun 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There is provided a non-volatile memory device comprising: a substrate; a lower electrode disposed on the substrate; a resistance layer disposed on the lower electrode; and an upper electrode disposed on the resistance layer, wherein the resistance layer include a stack of a graphene oxide film and an iron oxide film, wherein a resistance value of the resistance layer varies based on a voltage applied to the upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.