Single crystal silicon-carbide substrate and polishing solution
US10040972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jul 28, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process of manufacturing a single-crystal silicon-carbide substrate, includes contacting a surface of a single-crystal silicon-carbide plate with a surface of a polishing pad; and moving the surface of the single-crystal silicon-carbide plate relative to the surface of the polishing pad while supplying a polishing solution to the surface the polishing pad, to polish the surface of the single-crystal silicon-carbide plate. The polishing pad comprises a non-woven fabric or a porous resin. The polishing solution comprises an oxidizing agent which comprises a transition metal having oxidation-reduction potential of 0.5 V or more. Neither the polishing pad nor the polishing solution comprises an abrasive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.