Patent · US Active

Hermetic implantable sensor

US10041897B2 · kind B2 · utility

2Cited by
14References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 9, 2011
Grant dateAug 7, 2018
Priority date
Expiry dateFeb 13, 2034

Classification

  • Technology area (CPC A)Human Necessities
  • CPC primaryA61B2562/12
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

At least one conductor is formed at a preselected location on a substrate made of a first insulating material having a high temperature resistance. The conductor is made from a solidified electrically conductive thick film material. A coating made of a second insulating material is formed over the substrate to hermetically seal at least a portion of the conductor. An exposed distal region of the conductor provides a detection electrode. The conductor has a reduced porosity that inhibits migration of fluid or constituents thereof through the conductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.