Electrostatic protection device

US10043792B2 · kind B2 · utility

Assignee

• Analog Devices, Inc. · US

Inventors

• Edward John Coyne · Athenry, IE
• Patrick Martin McGuinness · Pallaskenry, IE
• Paul Malachy Daly · Limerick, IE
• Bernard Patrick Stenson · Limerick, IE
• David J. Clarke · Bramford, GB
• Andrew David Bain · Limerick, IE
• William Allan Lane · Carrigrohane, IE

Key dates

• Filing date: Nov 8, 2016
• Grant date: Aug 7, 2018
• Expiry date: Nov 8, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.