Image sensor device and method for forming the same
US10043841B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jul 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8067
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an image sensor device is provided. The method includes providing a substrate having a front surface and a back surface. The method includes removing a first portion of the substrate to form a first trench. The method includes forming a first isolation structure in the first trench. The first isolation structure has a top surface. The method includes removing a second portion of the first isolation structure and a third portion of the substrate to form a second trench passing through the first isolation structure and extending into the substrate. The method includes forming a second isolation structure in the second trench. The method includes forming a light-sensing region in the substrate. The method includes removing a fourth portion of the substrate to expose a first bottom portion of the second isolation structure and a backside of the light-sensing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.