Semiconductor device and method of manufacturing the same
US10043873B2 · kind B2 · utility
4Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2016 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Mar 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
Abstract
Provided is a semiconductor device with a field effect transistor. The semiconductor device includes a substrate, an active pattern on the substrate, a gate electrode crossing the active pattern and a capping structure on the gate electrode. The capping structure includes first and second capping patterns that are sequentially stacked on the gate electrode. The second capping pattern completely covers a top surface of the first capping pattern, and a dielectric constant of the second capping pattern is greater than that of the first capping pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.