Semiconductor device and method for manufacturing the same
US10043876B2 · kind B2 · utility
0Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2016 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Oct 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/481
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with enhanced reliability in which a gate electrode for a trench-gate field effect transistor is formed through a gate insulating film in a trench made in a semiconductor substrate. The upper surface of the gate electrode is in a lower position than the upper surface of the semiconductor substrate in an area adjacent to the trench. A sidewall insulating film is formed over the gate electrode and over the sidewall of the trench. The gate electrode and the sidewall insulating film are covered by an insulating film as an interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.