Method for manufacturing a semiconductor device
US10043892B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 13, 2016 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jun 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided, including forming a fin field effect transistor (FinFET) structure on a semiconductor substrate. The FinFET structure includes at least one fin, and a gate electrode structure and source/drain regions on the at least one fin. A dielectric film is formed over the at least on fin. The dielectric film is irradiated with ultra violet (UV) radiation from a single UV source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.