Transistor amplifier circuit and integrated circuit

US10043894B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Viet Thanh Dinh · Heverlee, BE
• Tony Vanhoucke · Bierbeek, BE
• Evelyne Gridelet · Seraing, BE
• Anco Heringa · Eindhoven, NL
• Jan W. Slotboom · Eindhoven, NL
• Dirk Klaassen · Waalre, NL

Key dates

• Filing date: Nov 17, 2014
• Grant date: Aug 7, 2018
• Expiry date: Jun 18, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

Disclosed is a transistor having a first region of a first conductivity type for injecting charge carriers into the transistor and a laterally extended second region of the first conductivity type having a portion including a contact terminal for draining said charge carriers from the transistor, wherein the first region is separated from the second region by an intermediate region of a second conductivity type defining a first p-n junction with the first region and a second p-n junction with the second region, wherein the laterally extended region separates the portion from the second p-n junction, and wherein the transistor further comprises a substrate having a doped region of the second conductivity type, said doped region being in contact with and extending along the laterally extended second region and a further contact terminal connected to the doped region for draining minority charge carriers from the laterally extended second region. An amplifier circuit and IC including such transistors are also disclosed.