Thin film transistor, method for fabricating the same, array substrate and display device
US10043911B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Dec 12, 2013 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Dec 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A thin film transistor (TFT), a method for fabricating the same, an array substrate and a display device are provided. The TFT includes a source electrode and a drain electrode, a semiconductor active layer, a gate insulating layer and a gate electrode. The TFT further includes a light-shielding layer between the source electrode and the drain electrode. The light-shielding layer separates the source electrode and the drain electrode, and the light-shielding layer is disposed on a light incident side of the semiconductor active layer and is used to prevent the incident light from irradiating on the semiconductor active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.