Semiconductor film, semiconductor device, display device, module, and electronic device
US10043913B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2015 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jun 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with favorable electrical characteristics is provided. In an oxide semiconductor film, a plurality of electron diffraction patterns are observed in such a manner that a surface over which the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm while the position of the film and the position of the electron beam are relatively moved. The electron diffraction patterns include 50 or more electron diffraction patterns observed in different areas. The sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%. The first electron diffraction patterns account for 50% or more. The first electron diffraction pattern includes observation points that are not symmetry or observation points disposed in a circular pattern. The second electron diffraction pattern includes observation points corresponding to the vertices of a hexagon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.