Back contact layer for photovoltaic cells

US10043922B2 · kind B2 · utility

Assignee

• The University of Toledo · US

Inventors

• Michael J. Heben · Denver, US
• Adam B. Phillips · Toledo, US
• Rajendra R. Khanal · Toledo, US
• Victor V. Plotnikov · Toledo, US
• Alvin D. Compaan · Maumee, US

Key dates

• Filing date: Aug 13, 2013
• Grant date: Aug 7, 2018
• Expiry date: Aug 13, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.