Light emitting diode and fabrication method thereof

US10043944B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Jie Zhang · Beihai, CN
• Xueliang Zhu · Xiamen, CN
• Chengxiao Du · Xiamen, CN
• Jianming Liu · Markham, CA
• Chen-ke HSU · Xiamen, CN

Key dates

• Filing date: Dec 19, 2017
• Grant date: Aug 7, 2018
• Expiry date: Dec 19, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/821

Abstract

A light-emitting diode (LED) epitaxial structure includes, from bottom to up, a substrate, a first conductive type semiconductor layer, a super lattice, a multi-quantum well layer with V pits, a hole injection layer and a second conductive type semiconductor layer. The hole injection layer appears in the shape of dual hexagonal pyramid, which fills up the V pits and embeds in the second conductive type semiconductor layer. Various embodiments of the present disclosures can effectively reduce point defect density and dislocation density of semiconductor material and effectively enlarge hole injection area and improves hole injection efficiency.