Method of manufacturing a light emitting device
US10043945B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jun 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
Abstract
A method for fabricating a light emitting device, comprising: forming a plurality of light emitting stacked layers above a substrate; forming and patterning a current blocking (CB) layer on the light emitting stacked layers; forming a transparent conductive layer covering the light emitting stacked layers and the current blocking layer; etching the transparent conductive layer and exposing a reserved region for a first pad electrode and a mesa structure, respectively; and etching an exposed portion of the light emitting stacked layers and a portion of the current blocking layer to form a remaining current blocking layer, the mesa structure and a first opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.