Optoelectronic semiconductor chip

US10043949B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Fabian Kopp · Bukit Mertajam, MY
• Christian Eichinger · Wenzenbach, DE
• Korbinian Perzlmaier · Regensburg, DE

Key dates

• Filing date: Oct 20, 2015
• Grant date: Aug 7, 2018
• Expiry date: Oct 20, 2035

Classification

• Technology area (CPC —): General

Abstract

According to the present disclosure, optoelectronic semiconductor chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. The p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence includes a plurality of dielectric layers with different refractive indices.