Light emitting diode chip

US10043958B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Korbinian Perzlmaier · Regensburg, DE
• Kai Gehrke · Regensburg, DE
• Robert Walter · Parsberg, DE
• Karl Engl · Niedergebraching, DE
• Guido Weiss · Regensburg, DE
• Markus Maute · Alteglofsheim, DE
• Stefanie Rammelsberger · Zeitlarn, DE

Key dates

• Filing date: Jan 10, 2017
• Grant date: Aug 7, 2018
• Expiry date: Jan 10, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.