Dual-gate chemical field effect transistor sensor
US10043990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2015 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Jul 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A chemical sensing field effect transistor device is disclosed. The device can include a control gate structure interfacing a control side of a semiconductor channel region, a source region, and a drain region. The control gate structure can comprise a control gate dielectric and a control gate electrode. The device can include a sensing gate structure interfacing the semiconductor channel region, the source region, and the drain region at a sensing side of the semiconductor channel region opposite the control gate structure. The sensing gate structure can comprise a sensing gate dielectric, and a sensing gate electrode. The device can include a functional layer interfacing the sensing gate electrode opposite the sensing gate dielectric. The functional layer can have an exposed interface surface. The functional layer can be capable of binding with a target analyte material sufficient to create a measurable change in conductivity across the semiconductor channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.