Edge-emitting etched-facet lasers
US10044168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2017 |
| Grant date | Aug 7, 2018 |
| Priority date | — |
| Expiry date | Dec 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.