PCD wafer without substrate for high pressure / high temperature sintering
US10046441B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2014 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Aug 19, 2036 |
Classification
- Technology area (CPC E)Fixed Constructions
- CPC primaryE21B10/567
- WIPO fieldCivil engineering
- WIPO sectorOther fields
Abstract
A method of forming a cutting element may include subjecting a first press containing at least a diamond powder-containing container and a volume of a high melting temperature non-reactive material to a first high pressure high temperature sintering condition to form a sintered polycrystalline diamond wafer including a diamond matrix of diamond grains bonded together and a plurality of interstitial spaces between the bonded together diamond grains; and subjecting a second press containing the sintered polycrystalline diamond wafer and a substrate to a second high temperature high pressure condition, thereby attaching the wafer to the substrate to form a cutting element having a polycrystalline diamond layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.