Method of forming fine patterns using block copolymer
US10047182B2 · kind B2 · utility
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Key dates
| Filing date | Sep 22, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Sep 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity. Provided is a block copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.