Magnetic article and rotation of magnetic spins via spin-orbit effect in same
US10049710B2 · kind B2 · utility
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4References
10Claims
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Key dates
| Filing date | Sep 5, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Sep 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory cell includes: a first fixed magnetic layer; a first nonmagnetic electrode disposed on the first magnetic layer; a memory storage layer disposed on the first nonmagnetic electrode; a tunnel barrier layer disposed on the memory storage layer; a second fixed magnetic layer disposed on the tunnel barrier layer; and a second nonmagnetic electrode disposed on the second fixed magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.