Semiconductor storage device and method for writing of the same
US10049715B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 1, 2016 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Aug 1, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0076
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device includes a memory cell, a switch, a source driver, a drain driver, a voltage measurement circuit and a control electrode driver. The memory cell has a control electrode, a floating electrode, a source and a drain. In a writing to the memory cell, the voltage measurement circuit measures a voltage generated between the control electrode and the source when the switch is in an on state connecting the control electrode and the drain and a predetermined current flows from the current source to the memory cell, and the control electrode driver applies to the control electrode a voltage that is controlled based on the voltage measured by the voltage measurement circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.