Method for growing epitaxies of a chemical compound semiconductor
US10049872B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 8, 2016 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Mar 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/472
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.