Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD
US10049882B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 25, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Jan 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.