System and method for damage reduction in light-assisted processes
US10049886B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 30, 2014 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Oct 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.