Semiconductor device and electronic apparatus
US10050070B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2016 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Apr 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plurality of pixels arranged in a two-dimensional array, each pixel of the plurality of pixels including a photoelectric conversion film configured to photoelectrically convert light of a first wavelength and pass light of a second wavelength, and a photoelectric conversion unit configured to photoelectrically convert the light of the second wavelength. The semiconductor device may further include a charge storage unit configured to store charge received from the photoelectric conversion unit of each pixel in a pixel group, wherein the pixel group includes adjacent pixels among the plurality of pixels, a plurality of through electrodes, and a wiring layer coupled to the photoelectric conversion film of each pixel of the plurality of pixels by at least one through electrode of the plurality of through electrodes. The present technology can be applied to a solid-state imaging element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.