3D high resolution X-ray sensor with integrated scintillator grid
US10050076B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 7, 2014 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Nov 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
Various embodiments of a 3D high resolution X-ray sensor are described. In one aspect, an indirect X-ray sensor includes a silicon wafer that includes an array of photodiodes thereon with each of the photodiodes having a contact on a front side of the silicon wafer and self-aligned with a respective grid hole of an array of grid holes that are on a back side of the silicon wafer. Each of the grid holes is filled with a scintillator configured to convert beams of X-ray into light. The indirect X-ray sensor also includes one or more silicon dies with an array of photo-sensing circuits each of which including a contact at a top surface of the one or more silicon dies. Contact on each of the photodiodes is aligned and bonded to contact of a respective photo-sensing circuit of the array of photo-sensing circuits of the one or more silicon dies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.