Light sensor
US10050078B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Oct 30, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B27/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A first substrate includes a plurality of unit pixel regions. A deep trench isolation structure is disposed in the first substrate and isolates each of the plurality of the unit pixel regions from each other. Each of a plurality of photoelectric converters is disposed in one of the plurality of unit pixel regions. A plurality of micro lenses are disposed on the first substrate. A plurality of light splitters are disposed on the first substrate. Each of the plurality of light splitters is disposed between one of the plurality of micro lenses and one of the plurality of photoelectric converters. Each of a plurality of photoelectric-conversion-enhancing layers is disposed between one of the plurality of light splitters and one of the plurality of photoelectric converters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.