Electron gas confinement heterojunction transistor

US10050112B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Erwan MORVAN · Grenoble, FR

Key dates

• Filing date: Feb 3, 2017
• Grant date: Aug 14, 2018
• Expiry date: Feb 3, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A high electron mobility heterojunction transistor, including a first GaN layer; a second, p-doped GaN layer on top of the first layer, including magnesium as a p-type dopant, the concentration of which is at least equal to 5*1016 cm−3 and at most equal to 2*1018 cm−3, the thickness of the second GaN layer being between 20 and 50 nm; a third, n-doped GaN layer on top of the second GaN layer in order to form a depleted p-n junction; a fourth GaN layer, which is not intentionally doped, on top of the third GaN layer; a semiconductor layer plumb with the fourth GaN layer, which is not intentionally doped, in order to form an electron gas layer.