Semiconductor device and method of manufacturing the same
US10050114B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Jul 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/013
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an active region in a shape of a fin extending in a first direction, the fin having source/drain regions spaced apart therein, gate structures crossing the fin between the source/drain regions, each including a gate electrode, a first contact structure in electrical contact with a first source/drain region, the first contact structure including a first lower contact and a first upper contact directly thereon, a second contact structure in electrical contact with a gate electrode of a gate structure, the second contact structure including a second lower contact and a second upper contact directly thereon, and a third contact structure in electrical contact with a gate electrode of a second gate structure and in electrical contact with a second source drain region, the third contact structure including a third lower contact and a third upper contact directly thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.