Enhanced normally-off high electron mobility heterojunction transistor

US10050137B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Erwan MORVAN · Grenoble, FR

Key dates

• Filing date: Feb 3, 2017
• Grant date: Aug 14, 2018
• Expiry date: Feb 3, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

A high electron mobility field-effect transistor of normally-off type, including a first layer of GaN with P-type doping; a second layer of GaN with N-type doping formed on the first layer of GaN; a third layer of unintentionally doped GaN formed on the second layer of GaN; a semiconductor layer formed to form an electron gas layer; a cavity formed through the third layer of GaN, without reaching the bottom of the second layer of GaN; a gate including a conductive gate material and a gate insulation layer arranged in the cavity, the gate insulation layer electrically insulating the conductive gate material relative to the second and third layers of GaN.