Thin-film transistor, method of fabricating thin-film transistor, and display device
US10050150B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2015 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Dec 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A thin-film transistor includes: an oxide semiconductor layer having a channel region, a source region, and a drain region; a gate insulating layer disposed above the oxide semiconductor layer; a gate electrode disposed at a position that is above the gate insulating layer and opposing the channel region; and a metal oxide layer stacked on the oxide semiconductor layer and in contact with the source region and the drain region. The metal oxide layer includes, as a main component, an oxide of a second metal whose bond dissociation energy with oxygen is greater than that of a first metal included in the oxide semiconductor layer. A first concentration ratio of oxygen to the second metal in an interface layer between the metal oxide layer and the oxide semiconductor layer is greater than a second concentration ratio of the same in a bulk layer of the metal oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.