Light emitting diode and fabrication method thereof
US10050181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Jul 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
Abstract
A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a light-emitting epitaxial laminated layer, a transparent dielectric layer, and a transparent conductive layer forming a reflectivity-enhancing system; and a metal reflective layer. The light-emitting epitaxial laminated layer has opposite first and second surfaces, and includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The transparent dielectric layer is on the second surface, inside which are conductive holes. The transparent conductive layer is located on one side surface of the transparent dielectric layer distal from the light-emitting epitaxial laminated layer. The metal reflective layer is located on one side surface of the transparent conductive layer distal from the transparent dielectric layer. Refractivity of the transparent dielectric layer is less than that of the light-emitting epitaxial laminated layer and the transparent conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.