Submount and manufacturing method thereof and semiconductor laser device and manufacturing method thereof
US10050411B2 · kind B2 · utility
0Cited by
3References
17Claims
0Family size
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Key dates
| Filing date | Oct 22, 2015 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Jan 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/02212
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.