Semiconductor laser element and semiconductor laser device
US10050412B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2017 |
| Grant date | Aug 14, 2018 |
| Priority date | — |
| Expiry date | Jun 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein is a semiconductor laser element capable of suppressing a wavelength dependency of a reflection ratio. A reflective film of the semiconductor laser element includes an L1 layer arranged at a first position from the end faces of the resonator and having a refractive index of n1; and a periodic structure configured by layering a plurality of pairs of an L2N layer and an L2N+1 layer. The L2N layer has a refractive index of n2, and the L2N+1 layer has a refractive index of n3, where n2<n3. The L1 layer has a linear expansion coefficient of ±30% with respect to a linear expansion coefficient of the substrate and is made of a film having an optical film thickness thinner than λ/4. An L2 layer arranged at a second position from the end faces of the resonator is made of a film having an optical film thickness thinner than λ/4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.