Semiconductor device and method for manufacturing same
US10054609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2016 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Feb 1, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for manufacturing a semiconductor device includes: preparing a first substrate; forming a metal film having a Ti layer as the most outermost surface on one surface of the first substrate a metal film having a Ti layer as the outermost surface; patterning the metal film to form a first pad portion; preparing a second substrate; forming on one surface of the second substrate a metal film having a Ti layer as the outermost surface; patterning the metal film to form a second pad portion; vacuum annealing the first substrate and the second substrate to remove an oxide film formed on the Ti layer in the first pad portion and the second pad portion; and bonding the first pad portion and the second pad portion together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.