Sub THZ to mid infrared tunable semiconductor plasmonics

US10054722B2 · kind B2 · utility

Assignee

• IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK · DE

Inventors

• Subhajit Guha · Frankfurt, DE
• Thomas Schroder · Berlin, DE
• Bernd Witzigmann · Burbank, US
• Giovanni Capellini · Roma, IT

Key dates

• Filing date: Mar 16, 2017
• Grant date: Aug 21, 2018
• Expiry date: Mar 18, 2037

Classification

• Technology area (CPC G): Physics
• CPC primary: G02F2203/10
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A tunable plasmon resonator, comprising a plasmon resonance layer made of graphene, a crystalline group-IV-semiconductor material or a crystalline group-III-V semiconductor material, and arranged on a carrier substrate, the plasmon resonance layer having a plasmon resonance region that is exposed to a sensing volume and a tuning device that is integrated into the plasmon resonator and arranged and configured to modify a density of free charge carriers in the plasmon resonance region or to modify an effective mass amount of the free charge carriers in the plasmon resonance region by applying of a control voltage to tuning control electrode(s) of the tuning device, thereby setting a plasmon frequency of plasmon polaritons in the plasmon resonance region to a desired plasmon frequency value within a plasmon frequency tuning interval, for resonance excitation of plasmon polaritons by incident electromagnetic waves of a frequency corresponding to the set plasmon frequency value.