Monomer, polymer, resist composition, and patterning process
US10054853B2 · kind B2 · utility
4Cited by
10References
21Claims
0Family size
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Key dates
| Filing date | Apr 10, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Apr 10, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F220/387
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monomer having an onium salt structure represented by formula (1) gives a polymer which is fully compatible with resist components. A resist composition comprising the polymer has advantages including reduced acid diffusion, high sensitivity, high resolution, a good balance of lithography properties, and less defects, and is quite effective for precise micropatterning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.