Semiconductor devices
US10056339B2 · kind B2 · utility
1Cited by
20References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Jun 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a first insulation layer, data storage elements, a contact plug, and a first dummy dam. The first insulation layer is on the substrate and includes a pad region and a peripheral region adjacent to the pad region. The data storage elements are on the pad region of the first insulation layer. The contact plug penetrates the first insulation layer on the peripheral region. The first dummy dam penetrates the first insulation layer and is disposed between the data storage elements and the contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.