Variable resistance memory device
US10056431B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Sep 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A variable resistance memory device may include a word line extending in a first direction, a bit line extending in a second direction crossing the first direction, a phase-changeable pattern provided between the word line and the bit line, a bottom electrode provided between the phase-changeable pattern and the word line, and a spacer provided on a side surface of the bottom electrode and between the phase-changeable pattern and the word line. The bottom electrode may include a first portion and a second portion, and the second portion is provided between the first portion and the spacer. The first and second portions of the bottom electrodes may have different lengths from each other in the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.