Power diode with improved reverse-recovery immunity
US10056501B2 · kind B2 · utility
1Cited by
8References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 27, 2016 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Dec 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a device with improved reverse-recovery immunity of a diode element. The device includes: a first conductivity-type drift layer; a second conductivity-type anode region provided in an upper portion of the drift layer; a second conductivity-type extraction region in contact with and surrounding the anode region; and a second conductivity-type field limiting ring region surrounding and separated from the extraction region at the upper portion of the drift layer, wherein the extraction region has a greater depth than the anode region and the field limiting ring region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.