Method of forming chalcogen compound light-absorption layer thin film for solar cell
US10056512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2016 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Aug 15, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of forming a chalcogen compound thin film suitable for use in a light-absorption layer of a solar cell. The method includes manufacturing a precursor liquid including an Sn precursor material and an S precursor material, applying the precursor liquid to form a precursor film, and heat-treating the precursor film. The Sn precursor material and the S precursor material are liquid materials. The present invention provides a method of forming a chalcogen compound thin film using a liquid precursor material without a sulfurization process, thereby forming a high-quality SnS thin film at low cost using a process which is suitable for mass production. Further, the light-absorption layer is formed using a process which is suitable for mass production, thus enabling the manufacture of a solar cell including the chalcogen compound thin film at low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.