Device including quantum dots
US10056523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2016 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Nov 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. The layer comprising quantum dots can be preferably fixed in the absence or substantial absence of oxygen. Also disclosed is a method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. Also disclosed is a method of making a film including a layer comprising quantum dots, the method comprising forming a layer comprising quantum dots over a carrier substrate, fixing the layer comprising quantum dots formed over the carrier substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. The layer comprising quantum dots can be preferably fixed in the absence or substantial absence of oxygen. Also disclosed is a method of preparing a device co…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.