Light emitting device with a light emitting junction formed by stacking semiconductor layers
US10056535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Jan 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A light emitting device includes a substrate, a light emitting chip, a first electrode, and a second electrode. The light emitting chip includes a first and a second semiconductor layers. The first semiconductor layer is disposed on the substrate. The second semiconductor layer is stacked on the first semiconductor layer and forms a light emitting junction with the first semiconductor layer. The first electrode connects to the first semiconductor layer and the second electrode connects to the second semiconductor layer. The light emitting device may further include a transparent layer that is disposed on the substrate and surrounds and contacts the lateral of the light emitting chip. A refraction index of the transparent layer is between a refraction index of the light emitting chip and that of a vacuum. The first electrode may penetrate the second semiconductor layer to connect to the first semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.