Impedance control in radio-frequency switches
US10056901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2017 |
| Grant date | Aug 21, 2018 |
| Priority date | — |
| Expiry date | Feb 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A radio-frequency switch includes a first field-effect transistor disposed between a first node and a second node, the first field-effect transistor having a source, a drain, a gate, and a body. The switch further includes a coupling path connected between the body of the first field-effect transistor and the gate of the first field-effect transistor, the coupling path including a diode. The switch further includes an adjustable impedance network connected between the body of the first field-effect transistor and a ground reference, the adjustable impedance network being configured to reduce radio-frequency distortion in the first field-effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.