High over-pressure capable silicon die pressure sensor
US10060813B2 · kind B2 · utility
3Cited by
15References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2016 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Feb 8, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/0618
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor includes a diaphragm having a bonding portion and a main boss separated from the bonding portion by at least one channel, the main boss having a first side face, a second side face and a chamfered corner face connecting the first side face to the second side face. A base of the sensor has a first contact area aligned with the main boss and separated from the main boss, wherein the bonding portion of the diaphragm is bonded to the base. At least one sensing element senses movement of the diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.