Method and apparatus for enhancing guardbands using “in-situ” silicon measurements
US10060966B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Mar 24, 2015 |
| Grant date | Aug 28, 2018 |
| Priority date | — |
| Expiry date | Mar 24, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2856
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus (e.g., semiconductor device) for setting voltages (e.g., guardbands) using “in situ,” or on-die, silicon measurements are described. In one embodiment the semiconductor device comprises: a process monitor to measure silicon parameters of the semiconductor device; and a controller coupled to the process monitor to set a voltage for use on at least a portion of the semiconductor device based on silicon process monitor measurements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.